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       CDBU0230-HF SMD Schottky Barrier Diode Page 1 QW-G1064 REV:A 0.071(1.80) 0.063(1.60) 0.014(0.35) Typ. 0.039(1.00) 0.031(0.80) 0.033(0.85) 0.027(0.70) Dimensions in inches and (millimeter) 0.012 (0.30) Typ. 0.028(0.70) Typ. 5 O C unless otherwise noted) Maximum Rating (at TA=2 n Typ Max Unit VRRM Repetitive peak reverse voltage Symbol Mi Parameter Conditions V 35 VR Reverse voltage V 30 IFSM Forward current,surge peak 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) 3000 PD mW O C 150 +125 -40 Power Dissipation Sunction temperature Tj O C +125 Junction temperature TSTG mA IO Average forward current mA 200 Symbol Min Typ Max Unit Parameter Conditions 5 O C unless otherwise noted) Electrical Characteristics (at TA=2 IR uA Forward voltage IF = 2 00 mA D C VF V 0.50 9 CT Capacitance between terimnals pF F = 1 MHZ and 10 VDC reverse voltage Reverse current VR = 3 0V 30 Features - Designed for mounting on small surface. - Extremely thin/leadless package. - Low drop-down voltage. - Majority carrier conduction. Mechanical data - Case: 0603/SOD-523F s tandard package, m olded plastic. - Terminals: Gold plated, solderable per M IL-STD-750,method 2026. - Marking code: cathode band & B5 - Mounting position: Any - Weight: 0.003 gram(approx.). Comchip Technology CO., LTD. 0603/SOD-523F Io = 2 00 mA VR = 3 0 Volts RoHS Device Halogen Free |